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Depletion Mode MOSFET
IXTA3N50D2 IXTP3N50D2
VDSX ID(on)
RDS(on)
= >
500V 3A 1.5
N-Channel
TO-263 AA (IXTA)
Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25C to 150C Continuous Transient TC = 25C
Maximum Ratings 500 20 30 125 - 55 ... +150 150 - 55 ... +150 V V V W C C C C C Nm/lb.in. g g
G = Gate S = Source
G S D (Tab)
TO-220AB (IXTP)
G
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220) TO-263 TO-220
300 260 1.13 / 10 2.5 3.0
DS
D (Tab)
D = Drain Tab = Drain
Features * Normally ON Mode * International Standard Packages * Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSX VGS(off) IGSX IDSX(off) RDS(on) ID(on) VGS = - 5V, ID = 250A VDS = 25V, ID = 250A VGS = 20V, VDS = 0V VDS = VDSX, VGS= - 5V VGS = 0V, ID = 1.5A, Note 1 VGS = 0V, VDS = 25V, Note 1 3 TJ = 125C Characteristic Values Min. Typ. Max. 500 - 2.0 - 4.0 V V Applications * * * * * * Audio Amplifiers Start-up Circuits Protection Circuits Ramp Generators Current Regulators Active Loads * Easy to Mount * Space Savings * High Power Density
100 nA 5 A 50 A 1.5 A
(c) 2009 IXYS CORPORATION, All Rights Reserved
DS100148B(12/09)
IXTA3N50D2 IXTP3N50D2
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS TO-220 0.50 VGS = 5V, VDS = 250V, ID = 1.5A Resistive Switching Times VGS = 5V, VDS = 250V, ID = 1.5A RG = 3.3 (External) VGS = -10V, VDS = 25V, f = 1MHz VDS = 30V, ID = 1.5A, Note 1 Characteristic Values Min. Typ. Max. 1.3 2.1 1070 102 24 27 71 56 42 40 5 20 S pF pF pF ns ns ns ns nC nC nC 1.00 C/W C/W
Dim. A b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 Millimeter Min. Max. 4.06 0.51 1.14 0.40 1.14 8.64 8.00 9.65 6.22 2.54 14.61 2.29 1.02 1.27 0 4.83 0.99 1.40 0.74 1.40 9.65 8.89 10.41 8.13 BSC 15.88 2.79 1.40 1.78 0.13 Inches Min. Max. .160 .020 .045 .016 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .190 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .005 Gate Drain Source Drain Bottom Side 1. 2. 3. 4.
TO-263 (IXTA) Outline
Safe-Operating-Area Specification Symbol SOA Test Conditions VDS = 400V, ID = 0.19A, TC = 75C, Tp = 5s Characteristic Values Min. Typ. Max. 75 W
TO-220 (IXTP) Outline Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VSD trr IRM QRM IF = 3A, VGS = -10V, Note 1 IF = 3A, -di/dt = 100A/s VR = 100V, VGS = -10V Characteristic Values Min. Typ. Max. 0.8 340 10.9 1.86 1.3 V ns A C
Pins:
1 - Gate 3 - Source
2 - Drain 4 - Drain
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXTA3N50D2 IXTP3N50D2
Fig. 1. Output Characteristics @ T J = 25C
3.0 VGS = 5V 3V 2V 1V 16 14 12 2V 0V 1.5 VGS = 5V 3V
Fig. 2. Extended Output Characteristics @ T J = 25C
2.5
ID - Amperes
2.0
ID - Amperes
10 8 6 4 1V
1.0
-1V
0V
0.5
-1V -2V -3V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 2 0 0 5 10 15 20 -2V 25 30
0.0
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ T J = 125C
3.0 VGS = 5V 2V 1V 0V 2.0
1.E-02 1.E+00
Fig. 4. Drain Current @ T J = 25C
VGS = - 2.50V
1.E-01
2.5
- 2.75V - 3.00V
ID - Amperes
1.5
-1V
ID - Amperes
- 3.25V - 3.50V - 3.75V
1.E-03
1.0 -2V 0.5 -3V 0.0 0 1 2 3 4 5 6 7
1.E-04
1.E-05
- 4.00V
1.E-06
0
100
200
300
400
500
600
VDS - Volts
VDS - Volts
Fig. 5. Drain Current @ T J = 100C
1.E+00 1.E+08
Fig. 6. Dynamic Resistance vs. Gate Voltage
VDS = 350V - 100V
1.E+07
VGS = -2.75V
1.E-01
-3.00V
ID - Amperes
1.E-02
-3.50V
R O - Ohms
-3.25V
1.E+06
1.E+05
TJ = 25C TJ = 100C
-3.75V
1.E-03 1.E+04
-4.00V
1.E-04 1.E+03
0
100
200
300
400
500
600
-4.2
-4.0
-3.8
-3.6
-3.4
-3.2
-3.0
-2.8
-2.6
-2.4
VDS - Volts
VGS - Volts
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXTA3N50D2 IXTP3N50D2
Fig. 7. Normalized RDS(on) vs. Junction Temperature
2.6 2.4 2.2 VGS = 0V I D = 1.5A 2.6 3.0 VGS = 0V 5V - - - TJ = 125C
Fig. 8. RDS(on) Normalized to ID = 1.5A Value vs. Drain Current
R DS(on) - Normalized
R DS(on) - Normalized
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150
2.2
1.8
1.4 TJ = 25C
1.0
0.6 0 1 2 3 4 5 6 7 8 9 10
TJ - Degrees Centigrade
ID - Amperes
Fig. 9. Input Admittance
10 9 8 7 6 5 4 3 2 1 0 -3.5 0 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 0 1 2 TJ = 125C 25C - 40C VDS = 30V 5 6 VDS = 30V
Fig. 10. Transconductance
TJ = - 40C
25C
g f s - Siemens
4
125C
ID - Amperes
3
2
1
3
4
5
6
7
8
9
10
VGS - Volts
ID - Amperes
Fig. 11. Breakdown and Threshold Voltages vs. Junction Temperature
1.4 10 9 1.3 8 7 VGS = -10V
Fig. 12. Forward Voltage Drop of Intrinsic Diode
BV / VGS(off) - Normalized
1.2
IS - Amperes
VGS(off) @ VDS = 25V
6 5 4 3 2 1 TJ = 25C TJ = 125C
1.1 BVDSX @ VGS = - 5V
1.0
0.9
0.8 -50 -25 0 25 50 75 100 125 150
0 0.4 0.5 0.6 0.7 0.8 0.9
TJ - Degrees Centigrade
VSD - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA3N50D2 IXTP3N50D2
Fig. 13. Capacitance
10,000 5
Fig. 14. Gate Charge
4 3 VDS = 250V I D = 1.5A I G = 10mA
f = 1 MHz
Capacitance - PicoFarads
Ciss
1,000
2
VGS - Volts
1 0 -1 -2 -3
Coss 100
Crss 10 0 5 10 15 20 25 30 35 40
-4 -5 0 5 10 15 20 25 30 35 40
VDS - Volts
QG - NanoCoulombs
Fig. 15. Forward-Bias Safe Operating Area @ T C = 25C
100.0 100.0
Fig. 16. Forward-Bias Safe Operating Area @ T C = 75C
RDS(on) Limit 10.0 10.0
RDS(on) Limit
ID - Amperes
ID - Amperes
25s 100s
25s 100s 1.0 TJ = 150C TC = 75C Single Impedance Thermal Pulse 10 100
1.0 TJ = 150C TC = 25C Single Pulse DC
1ms 10ms 100ms
1ms 10ms 100ms DC 1,000
Fig. 17. Maximum Transient
0.1 100 1,000
10.00
0.1
10
VDS - Volts
VDS - Volts
Fig. 17. Maximum Transient Thermal Impedance
2.00 1.00
Z (th)JC - C / W
0.10 0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_3N50D2(3C)8-17-09-A

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